Dallas, TX, United States of America

Daron G Evans


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1996-1997

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2 patents (USPTO):Explore Patents

Title: Daron G Evans: Innovator in Field Emission Technology

Introduction

Daron G Evans is a notable inventor based in Dallas, TX (US). He has made significant contributions to the field of field emission devices, holding 2 patents that showcase his innovative approach to technology.

Latest Patents

His latest patents include a method of making an anode plate for use in a field emission device. This anode plate comprises a transparent planar substrate with a plurality of electrically conductive, parallel stripes that serve as the anode electrode. These stripes are covered by phosphors, while a substantially opaque, electrically insulating material is affixed to the substrate in the spaces between the conductors. This design acts as a barrier to ambient light, enhancing the electrical isolation of the conductive stripes and reducing the risk of breakdown due to leakage current. The opaque material is typically glass with dispersed impurities, which may include organic dyes or transition metal oxides, and is formed through a specific fabrication process.

Career Highlights

Daron G Evans is associated with Texas Instruments Corporation, where he has been able to apply his expertise in developing advanced technologies. His work has contributed to the evolution of display devices, making them more efficient and reliable.

Collaborations

Some of his notable coworkers include Bruce E Gnade and Scott Robert Summerfelt, who have collaborated with him on various projects within the company.

Conclusion

Daron G Evans continues to be a significant figure in the field of field emission technology, with his patents reflecting his innovative spirit and dedication to advancing electronic display solutions.

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