Company Filing History:
Years Active: 2023
Title: Dario Pagnano: Innovator in Semiconductor Technology
Introduction
Dario Pagnano is a notable inventor based in Cambridge, GB. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and applications.
Latest Patents
Dario Pagnano holds a patent for a "High voltage blocking III-V semiconductor device." This semiconductor device features a type IV semiconductor base substrate, with a first type III-V semiconductor layer formed on its surface. Additionally, a second type III-V semiconductor layer with a different bandgap is formed on the first layer. The device includes electrically conductive terminals that are in ohmic contact with a two-dimensional charge carrier gas. The design incorporates a highly doped island beneath one of the terminals, enhancing its functionality.
Career Highlights
Dario Pagnano is currently associated with Infineon Technologies Austria AG, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced semiconductor devices that meet the demands of modern technology.
Collaborations
Dario has collaborated with talented coworkers such as Shu Yang and Giorgia Longobardi, contributing to a dynamic and innovative work environment.
Conclusion
Dario Pagnano's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Infineon Technologies Austria AG highlight his commitment to advancing the field.