The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Mar. 17, 2017
Infineon Technologies Austria Ag, Villach, AT;
Shu Yang, Cambridge, GB;
Giorgia Longobardi, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Dario Pagnano, Cambridge, GB;
Gianluca Camuso, Cambridge, GB;
Jinming Sun, Irvine, CA (US);
Mohamed Imam, Chandler, AZ (US);
Alain Charles, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a first highly doped island that is disposed directly beneath the second device terminal and extends to the first surface of the base substrate. The first highly-doped island is laterally disposed between portions of semiconductor material having a lower net doping concentration than the first highly-doped island.