Company Filing History:
Years Active: 2025
Title: Daotian Shi: Innovator in Gallium Oxide Technology
Introduction
Daotian Shi is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of materials science, particularly in the development of gallium oxide films. His innovative work has implications for various high-tech applications, including electronic devices.
Latest Patents
Daotian Shi holds a patent for a method of preparing a p-type gallium oxide film. This patent describes a process where an MGaN target material is subjected to ablating, sputtering, or evaporation in a vacuum chamber via physical vapor deposition. The resulting MGaN clusters are oxidized to obtain an M-N co-doped p-type gallium oxide film on a substrate. This method not only enhances the properties of the gallium oxide film but also opens avenues for its application in solar-blind ultraviolet detection devices and high-power electronic devices. He has 1 patent to his name.
Career Highlights
Daotian Shi is affiliated with Hubei University, where he continues to engage in research and development in advanced materials. His work has garnered attention for its potential to revolutionize the manufacturing processes of electronic components.
Collaborations
He collaborates with notable colleagues, including Yunbin He and Zhouyang Luo, who contribute to his research endeavors and help advance the field of materials science.
Conclusion
Daotian Shi's innovative work in gallium oxide technology exemplifies the impact of research on modern electronics. His contributions are paving the way for future advancements in high-tech applications.