The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 21, 2024
Hubei University, Wuhan, CN;
Yunbin He, Wuhan, CN;
Zhouyang Luo, Wuhan, CN;
Daotian Shi, Wuhan, CN;
Yinmei Lu, Wuhan, CN;
Mingkai Li, Wuhan, CN;
Jian Chen, Wuhan, CN;
Lufeng Chen, Wuhan, CN;
Hubei University, Wuhan, CN;
Abstract
A method for preparing a p-type gallium oxide film is provided. An MGaN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MGaN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MGaN clusters are oxidized by Oto obtain M-N co-doped p-type gallium oxide film on a substrate. The MGaN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.