Danny Huang

Title: The Innovative Contributions of Danny Huang in Semiconductor Technology

Introduction

Danny Huang is an accomplished inventor based in Shanghai, China, known for his contributions to the field of semiconductor technology. With one patent to his name, Huang has made notable strides in enhancing the local interconnect structures used in semiconductor fabrication.

Latest Patents

Huang's patent, titled "Local Interconnect Structure and Fabrication Method," details a sophisticated approach to the construction of local interconnect structures. The patent describes a technique where a dielectric layer is formed on a semiconductor substrate and a first film layer is patterned to define a designated region for the local interconnect structure. Key steps in the process include the formation of a sidewall spacer and etching to create openings that are later filled with conductive materials, ensuring the effectiveness of the interconnect structures within semiconductor devices.

Career Highlights

Huang is currently employed at the Semiconductor Manufacturing International Corporation (SMIC), where he applies his expertise in semiconductor manufacturing processes. His innovative work has contributed to the progress and efficiency of the company’s production capabilities.

Collaborations

Throughout his career, Huang has had the opportunity to collaborate with esteemed colleagues, including Dongjiang Wang and Steven Y Zhang. Together, they work on advancing technologies within the semiconductor industry, combining their expertise to push the boundaries of innovation.

Conclusion

With his patent and ongoing work at SMIC, Danny Huang remains a significant figure in the intersection of technology and innovation in semiconductor manufacturing. His contributions play a crucial role in developing more efficient interconnect structures that are essential for the performance of modern electronic devices.