Hsinchu, Taiwan

Daniel Y Lan

This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Y Lan. Retrieved from https://idiyas.com/inventor/daniel-y-lan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Daniel Y Lan

Introduction: Daniel Y Lan, a pioneering inventor hailing from Hsinchu Hsien, TW, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Daniel Y Lan's latest patents include cutting-edge technologies in the fields of semiconductor manufacturing, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Daniel Y Lan has held key positions in leading tech companies, where he spearheaded research and development projects that have led to numerous successful patent applications. His expertise in areas such as nanotechnology and microelectronics has earned him recognition as a trailblazer in the industry.

Collaborations: Throughout his career, Daniel Y Lan has collaborated with top researchers, engineers, and scientists from around the globe, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the development of cutting-edge technologies that have revolutionized various sectors.

Conclusion: Daniel Y Lan's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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