Southampton, United Kingdom

Daniel William Hewak



Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 43(Granted Patents)


Location History:

  • Southampton, GB (2001 - 2006)
  • Hampshire, GB (1999 - 2015)

Company Filing History:


Years Active: 1999-2015

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Daniel William Hewak

Introduction

Daniel William Hewak is a notable inventor based in Southampton, GB. He has made significant contributions to the field of phase change memory devices, holding a total of 7 patents. His work focuses on developing new materials that enhance the performance of memory technologies.

Latest Patents

Hewak's latest patents include groundbreaking research on phase change memory devices and methods that utilize gallium, lanthanide, and chalcogenide compounds. This new class of phase change materials includes compounds such as Ga, La, and S (GLS), along with related compounds where sulfur can be substituted with oxygen, selenium, and/or tellurium. Additionally, lanthanum can be replaced with other elements from the lanthanide series. These materials have demonstrated low energy switching capabilities, making them highly efficient. For instance, the GLS material offers an optical recording medium with erasability that is 3-5 dB greater than the standard GeSbTe (GST) material used in phase change memories.

Career Highlights

Throughout his career, Hewak has worked with esteemed organizations, including the University of Southampton and Pirelli Cavi e Sistemi S.p.a. His innovative research has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Hewak has collaborated with notable colleagues such as Bryce Neilson Samson and Richard Ian Laming. Their combined expertise has contributed to the advancement of phase change materials and memory devices.

Conclusion

Daniel William Hewak's contributions to the field of phase change memory technology are significant and impactful. His innovative research continues to pave the way for advancements in memory devices, showcasing the importance of his work in the industry.

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