Company Filing History:
Years Active: 2017-2018
Title: The Innovative Contributions of Daniel Tekleab
Introduction
Daniel Tekleab is a notable inventor based in Hayward, California. He has made significant contributions to the field of image sensor technology, holding three patents that showcase his innovative approach to engineering.
Latest Patents
One of his latest patents is titled "Apparatus and methods for buried channel transfer gate." This invention involves an image sensor pixel that includes a photodiode, a floating diffusion, and a transfer gate. A buried channel is formed under the transfer gate, extending from the floating diffusion to overlap a portion of the transfer gate. This design allows for antiblooming current from the photodiode to reach the floating diffusion while maintaining a high off voltage to prevent dark current from flowing into the photodiode.
Another significant patent is focused on "Pixels with photodiodes formed from epitaxial silicon." This invention describes an image sensor that contains a plurality of pixels, each with a photodiode. The pixels are designed for near-infrared applications and feature deep photodiodes formed by growing doped epitaxial silicon in trenches within a substrate. The process involves doping the silicon with phosphorus or arsenic and utilizing laser annealing to activate the ions, ensuring optimal performance for subsequent processing.
Career Highlights
Daniel Tekleab is currently employed at Semiconductor Components Industries, LLC, where he continues to push the boundaries of technology. His work