The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Oct. 14, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Daniel Tekleab, Hayward, CA (US);
Muhammad Maksudur Rahman, San Jose, CA (US);
Eric Gordon Stevens, Webster, NY (US);
Bartosz Piotr Banachowicz, San Jose, CA (US);
Robert Michael Guidash, Rochester, NY (US);
Vladimir Korobov, San Mateo, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.