Company Filing History:
Years Active: 1998-2000
Title: Innovations of Daniel R Grumbling
Introduction
Daniel R Grumbling is an accomplished inventor based in Beaverton, OR (US). He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on improving the reliability and efficiency of memory technology.
Latest Patents
One of his latest patents is titled "Memory test mode for wordline resistive defects." This invention provides a method and apparatus for detecting resistive defects in a memory device. A pulldown device is strategically placed at the end of a wordline, opposite the wordline driver. When the test mode is enabled, the pulldown device is activated. By adjusting the on-resistance of the pulldown device to be several times larger than the wordline wire resistance, a resistive divider is created. If a resistive defect exists in the wordline, the increased resistance will result in a voltage drop when the pulldown device is turned on. This voltage drop serves as an indicator of a defect, allowing for the precise location of the issue within the wordline.
Career Highlights
Daniel R Grumbling is currently employed at Intel Corporation, where he continues to innovate in the field of memory technology. His expertise and inventions contribute to the advancement of Intel's product offerings and enhance the performance of their memory devices.
Collaborations
One of his notable coworkers is Jeffrey K Greason. Their collaboration has likely fostered an environment of innovation and creativity within their projects.
Conclusion
Daniel R Grumbling's contributions to memory technology through his patents and work at Intel Corporation highlight his role as a significant inventor in the field. His innovative approaches to detecting defects in memory devices pave the way for advancements in technology.