This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf. Active years: 1994.
Company Filing History:
Years Active: 1994
Title: The Innovative Contributions of Daniel Pribat
Introduction
Daniel Pribat is a notable inventor based in Sèvres, France. He has made significant contributions to the field of semiconductor technology. His work focuses on methods for growing heteroepitaxial layers, which are crucial for various electronic applications.
Latest Patents
Daniel Pribat holds a patent for a "Method for the growing of heteroepitaxial layers." This innovative method involves creating a layer of semiconductor material on a substrate within a confinement space. The growth process is initiated from a seed, which has a unique cross-section that is substantially perpendicular to the general direction of growth. The seed features a thick central part framed by two thinned lateral parts, and the confinement space mirrors the seed's cross-section.
Career Highlights
Daniel Pribat is associated with Thomson-Csf, a company known for its advancements in technology and innovation. His work at the company has allowed him to explore and develop new methods that enhance semiconductor manufacturing processes.
Collaborations
Throughout his career, Daniel has collaborated with esteemed colleagues such as Pierre Legagneux and Bruno Gerard. These partnerships have contributed to the advancement of his research and the successful implementation of his patented methods.
Conclusion
Daniel Pribat's innovative work in semiconductor technology exemplifies the importance of research and development in advancing electronic materials. His contributions continue to influence the field and inspire future innovations.