Company Filing History:
2 out of 1,765 
1 out of 915 
1 out of 5 
Years Active: 1998-2000
Title: **The Innovations of Daniel M Fleetwood: Pioneering Memory Device Technology**
Introduction
Daniel M Fleetwood, an accomplished inventor based in Albuquerque, NM, has made significant contributions in the field of memory devices with a total of four innovative patents to his name. His latest endeavors focus on utilizing the movement of protons within a dielectric layer to enhance memory functionality, marking a notable advancement in the realm of microelectronics.
Latest Patents
Fleetwood's most recent patents include a memory device that leverages the motion of protons confined within a dielectric layer. This memory element is designed with a silicon-silicon dioxide-silicon layered structure. Protons are introduced during an anneal phase in a hydrogen-rich atmosphere, which is crucial for the device's operation. Combining low power consumption with radiation tolerance, this invention is compatible with conventional silicon MOS processing, allowing for seamless integration with other microelectronic components on the same substrate. Additionally, an enhancement featuring an optically active layer transforms the memory element into an electrically written and optically read optical memory device.
Career Highlights
Throughout his career, Fleetwood has been affiliated with notable organizations such as Sandia Corporation and the Science & Technology Corporation at the University of New Mexico. His work in these institutions has not only bolstered his technical expertise but also contributed to advancing technology in memory devices.
Collaborations
Fleetwood has collaborated with impressive peers in his field, including William L Warren and Karel J Vanheusden. These collaborations have fostered an environment of innovation and progression within the microelectronics sector, highlighting the importance of teamwork in achieving breakthrough results.
Conclusion
Daniel M Fleetwood stands out as a visionary inventor whose patents significantly impact the future of memory device technology. His pioneering work, backed by collaborations with esteemed colleagues and supported by reputable institutions, positions him as a key figure in the evolving landscape of microelectronics. As he continues to innovate, the implications of his research are likely to influence various technological applications for years to come.