Company Filing History:
Years Active: 1976-1977
Title: Innovations of Daniel Leon Rode
Introduction
Daniel Leon Rode is an accomplished inventor based in Murray Hill, NJ (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the quality and efficiency of semiconductor layers through innovative processes.
Latest Patents
One of Rode's latest patents is titled "Growing smooth epitaxial layers on misoriented substrates." This patent describes a process for enhancing the smoothness of semiconductor layers grown by epitaxy. The method involves misorienting the growth surface of the substrate from a major crystallographic plane by a small critical angle. This critical angle is determined by both the growth temperature and the crystal composition. Specific examples include the growth of LPE Al.sub.x Ga.sub.1-x As on GaAs substrates misoriented from the (100) and (111)B major planes. Another notable patent is the "LPE technique for reducing edge growth." This technique utilizes a liquid phase epitaxy method that minimizes edge growth and increases usable wafer area by controlling the temperature and convection currents during the growth process.
Career Highlights
Daniel Leon Rode has had a distinguished career at Bell Telephone Laboratories, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to significant improvements in the manufacturing processes of semiconductor materials.
Collaborations
Rode has collaborated with various professionals in his field, including his coworker Norman E. Schumaker. Their joint efforts have contributed to the development of advanced semiconductor technologies.
Conclusion
Daniel Leon Rode's contributions to semiconductor technology through his patents and work at Bell Telephone Laboratories highlight his role as a key innovator in the field. His innovative techniques continue to influence the industry and pave the way for future advancements.