The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1977
Filed:
Feb. 23, 1976
Daniel Leon Rode, Murray Hill, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of the substrate from a major crystallographic plane by a small critical angle approximately equal to the tread-to-riser angle of terraces which would be formed if the epitaxial layer were deposited on a growth surface nominally parallel to the major plane. The critical angle is a function of both the growth temperature and the crystal composition. Specific examples for the growth of LPE Al.sub.x Ga.sub.1-x As at various growth temperatures and values of x on GaAs substrates misoriented from the (100) and (111)B major planes are given. Also described are examples of silicon layers grown by CVD on (111) substrates to measure the critical angle in the (112) direction.