Daniel L Meier

Title: Innovations of Daniel L Meier

Introduction

Daniel L Meier is a prominent inventor based in Pittsburgh, PA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the efficiency and functionality of silicon devices.

Latest Patents

One of his latest patents is titled "Method and apparatus for self-doping contacts to a semiconductor." This invention provides a system and method for creating self-doping contacts to silicon devices. The contact metal is coated with a layer of dopant and subjected to high temperature, allowing for the alloying of silver with silicon. This process simultaneously dopes the silicon substrate and forms a low-resistance ohmic contact. A self-doping negative contact can be formed from unalloyed silver, which may be applied to the silicon substrate through various methods such as sputtering, screen printing, or evaporation. The silver is coated with a layer of dopant and heated to a temperature above the Ag-Si eutectic temperature, ensuring good electrical conductivity in the final contact material.

Career Highlights

Throughout his career, Daniel has worked with notable companies such as Ebara Solar, Inc. and Ebara Corporation. His expertise in semiconductor technology has made him a valuable asset in these organizations.

Collaborations

Daniel has collaborated with several professionals in his field, including Hubert P Davis and Ruth A Garcia. These collaborations have contributed to the advancement of his innovative projects.

Conclusion

Daniel L Meier's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods continue to influence the development of efficient silicon devices.