Daniel L Huang

Title: The Innovations of Daniel L Huang

Introduction

Daniel L Huang is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of transistor fabrication. His innovative approach has led to advancements that are crucial for the development of modern electronic devices.

Latest Patents

Daniel L Huang holds a patent for a "Deep submicron transistor fabrication method." This method employs only optical lithography and involves several key steps. It includes the formation of a relatively wide aperture using optical techniques, the creation of composite sidewalls with differential etch resistance, and the etching of the final aperture to expose a controlled channel length. Additionally, the method involves the implantation of the channel through the aperture and the implantation of source and drain while protecting previously doped LDD regions in the active area. He has 1 patent to his name.

Career Highlights

Daniel L Huang is currently associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to be at the forefront of technological advancements in the semiconductor industry. His expertise and innovative methods have contributed to the company's reputation as a leader in technology.

Collaborations

Some of his notable coworkers include Louis L Hsu and Wen-Yuan Wang. Their collaborative efforts have further enhanced the research and development initiatives within their team.

Conclusion

Daniel L Huang's contributions to the field of transistor fabrication exemplify the spirit of innovation that drives the technology sector forward. His work not only showcases his expertise but also highlights the importance of collaboration in achieving groundbreaking advancements.