Palaiseau, France

Daniel L G Ricoult

This inventor holds 1 USPTO granted patent. Top assignee: Corning Incorporated. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel L G Ricoult. Retrieved from https://idiyas.com/inventor/daniel-l-g-ricoult-a7qci615

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Biography of Daniel L G Ricoult

Introduction: Daniel L G Ricoult is an accomplished inventor based in Palaiseau, France. He is known for his innovative contributions to the field of current measurement technology. His work has significantly advanced the methods used to measure large currents.

Latest Patents: Daniel holds a patent for a method of measuring a large current using a glass fiber current sensor. This method involves determining the magnitude of exceptionally large currents by measuring the angle of rotation of polarized light in a magnetic field created by the current. The sensor is composed of a fluoride glass with a low Verdet constant and a photoelastic coefficient not exceeding about 0.25 (nm/cm)/(kg/cm).

Career Highlights: Daniel is associated with Corning Incorporated, a leading company in the field of materials science. His work at Corning has allowed him to explore and develop advanced technologies that enhance current measurement techniques.

Collaborations: Throughout his career, Daniel has collaborated with notable colleagues, including Nicholas Francis Borrelli and Yves A H Brocheton. These collaborations have contributed to the success of his innovative projects.

Conclusion: Daniel L G Ricoult's contributions to the field of current measurement are noteworthy. His innovative methods and collaborations with esteemed colleagues reflect his commitment to advancing technology in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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