Amston, CT, United States of America

Daniel James Graves

This inventor holds 1 USPTO granted patent. Top assignee: Rtx Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel James Graves. Retrieved from https://idiyas.com/inventor/daniel-james-graves

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Daniel James Graves and the Normal Interface Surface Mating Sensor

Introduction

Daniel James Graves is an inventor associated with Amston, Connecticut, and RTX Corporation. His work includes a patent for a sensor designed to detect and measure physical contact between opposing surfaces.

Latest Patents

Graves is credited with 1 patent: “Normal Interface Surface Mating Sensor.” The invention uses a power source, electrically conductive sensing elements, and an ammeter, a voltmeter, or both. The sensing elements are arranged across a contact face so that contact with a conductive area on an opposing face produces an electrical signal at the corresponding location. Measurements from the instruments are combined into a contact event indicator that includes a conductivity measurement, helping characterize contact across a sequence of sensor interfaces.

Career Highlights

Graves’s patent reflects an approach to sensing that captures both the location and electrical characteristics of surface contact. The disclosed system combines spatially arranged sensing elements with electrical measurements to indicate contact events.

Collaborations

Graves is associated with RTX Corporation. His listed coworkers include Eli Cole Warren and Melanie E. Tibbetts.

Conclusion

Daniel James Graves’s patented sensor combines spatial contact detection and conductivity measurement, highlighting his contribution to interface-sensing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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