This inventor holds 1 USPTO granted patent. Top assignee: Lfe Corporation. Active years: 1985.
Company Filing History:
Years Active: 1985
Title: The Innovations of Daniel H Choe
Introduction
Daniel H Choe is an accomplished inventor based in Framingham, MA (US). He has made significant contributions to the field of plasma technology, particularly in the etching of aluminum and aluminum alloys. His innovative work has led to the development of a unique process that enhances manufacturing capabilities.
Latest Patents
Daniel H Choe holds 1 patent for his invention titled "Plasma reactive ion etching of aluminum and aluminum alloys." This process involves a selective plasma-based reactive ion etching technique that utilizes gas mixtures with BCl.sub.3 as a major constituent, along with Cl.sub.2, SiF.sub.4, and O.sub.2 as minor constituents. The major constituent is required to constitute 40% to 65% by volume of the mixture, showcasing a precise approach to etching that can improve efficiency in various applications.
Career Highlights
Choe is currently employed at LFE Corporation, where he continues to push the boundaries of innovation in his field. His work at LFE Corporation has allowed him to collaborate with other talented professionals and contribute to advancements in technology.
Collaborations
One of his notable coworkers is Adir Jacob, with whom he has likely shared insights and expertise in their respective areas of research. Their collaboration may have fostered an environment of innovation and creativity within their projects.
Conclusion
Daniel H Choe's contributions to the field of plasma technology and his innovative patent demonstrate his commitment to advancing manufacturing processes. His work not only highlights his expertise but also reflects the importance of collaboration in driving technological progress.