This inventor holds 1 USPTO granted patent. Top assignee: University of Illinois. Active years: 2004.
Company Filing History:
Years Active: 2004
Title: The Innovative Contributions of Daniel Gall
Introduction
Daniel Gall is a notable inventor based in Troy, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to MOS devices. His work exemplifies the intersection of research and practical application in modern electronics.
Latest Patents
Daniel Gall holds a patent for a "Method for forming an epitaxial cobalt silicide layer on MOS devices." This method involves sputter depositing cobalt in an ambient to create a first layer of cobalt silicide on the gate and source/drain regions of the MOS device. Following this, cobalt is sputter deposited again in an argon ambient to enhance the thickness of the cobalt silicide layer to a second thickness. This innovation is crucial for improving the performance and efficiency of MOS devices.
Career Highlights
Daniel Gall is affiliated with the University of Illinois, where he continues to advance his research in semiconductor technology. His work has garnered attention for its practical implications in the electronics industry. With a focus on enhancing device performance, Gall's contributions are paving the way for future innovations in the field.
Collaborations
Daniel Gall has collaborated with esteemed colleagues such as Chong Wee Lim and Ivan Petrov. Their combined expertise fosters a rich environment for innovation and research, further enhancing the impact of their work in semiconductor technology.
Conclusion
Daniel Gall's innovative approach to forming epitaxial cobalt silicide layers on MOS devices showcases his commitment to advancing semiconductor technology. His contributions are vital for the ongoing development of efficient electronic devices.