Sherwood, OR, United States of America

Daniel Damjanovic

This inventor holds 2 USPTO granted patents. Top assignee: Lam Research Corporation. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Damjanovic. Retrieved from https://idiyas.com/inventor/daniel-damjanovic-27t9nzvv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2017-2020

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2 patents (USPTO):Explore Patents

Title: Innovations of Daniel Damjanovic in Semiconductor Manufacturing

Introduction

Daniel Damjanovic is an accomplished inventor based in Sherwood, OR (US). He has made significant contributions to the field of semiconductor device manufacturing, holding a total of 2 patents. His work focuses on improving the performance and reliability of semiconductor devices through innovative treatment processes.

Latest Patents

One of his latest patents is titled "Oxidizing treatment of aluminum nitride films in semiconductor device manufacturing." This invention involves the oxidative treatment of thin AlN films in a plasma, which forms AlO and AlON films without damaging the underlying layers of a partially fabricated semiconductor device. The resulting films exhibit improved leakage current compared to the original AlN film and are suitable for use as etch stop layers. The oxidative treatment process utilizes a plasma formed from a gas mixture that includes both oxygen and hydrogen-containing gases, effectively preventing oxidative damage to the underlying layers.

Another notable patent by Damjanovic is "Methods for formation of low-k aluminum-containing etch stop films." This invention describes the deposition of dielectric AlO, AlOC, AlON, and AlOCN films characterized by a dielectric constant of less than about 10. These films serve as etch stop layers and diffusion barriers on partially fabricated semiconductor devices. The process involves contacting a substrate with an aluminum-containing compound in an iALD process chamber, followed by treatment with a plasma to form the desired aluminum oxide layers.

Career Highlights

Daniel Damjanovic is currently employed at Lam Research Corporation, where he continues to advance semiconductor manufacturing technologies. His expertise in the field has led to innovative solutions that enhance device performance and manufacturing efficiency.

Collaborations

Throughout his career, Damjanovic has collaborated with notable colleagues, including Nagraj Shankar and Pramod Subramonium. These collaborations have contributed to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion

Daniel Damjanovic's contributions to semiconductor device manufacturing through his innovative patents demonstrate his commitment to advancing technology in this critical field. His work not only improves device performance but also paves the way for future innovations in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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