Munich, Germany

Daniel Bergman

This inventor holds 1 USPTO granted patent. Top assignee: Intel Mobile Communications Gmbh. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Bergman. Retrieved from https://idiyas.com/inventor/daniel-bergman-ksey1hn2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Daniel Bergman

Introduction

Daniel Bergman is a notable inventor based in Munich, Germany. He has made significant contributions to the field of memory technology, particularly with his work on magnetic random access memory. His innovative approach has led to advancements that enhance data storage and retrieval processes.

Latest Patents

Daniel Bergman holds a patent for a magnetic random access memory. This technology is configured as a read/write memory, with at least a first section designed to be converted into a read-only memory. This innovation represents a crucial step forward in memory technology, providing improved efficiency and functionality.

Career Highlights

Bergman is currently employed at Intel Mobile Communications GmbH, where he continues to push the boundaries of technology. His work at Intel has allowed him to collaborate with some of the brightest minds in the industry, contributing to the development of cutting-edge solutions.

Collaborations

Some of his notable coworkers include Uwe Hildebrand and Josef Hausner. Their collective expertise fosters an environment of innovation and creativity, driving forward the advancements in memory technology.

Conclusion

Daniel Bergman is a key figure in the realm of memory technology, with his patent and work at Intel Mobile Communications GmbH showcasing his commitment to innovation. His contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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