This inventor holds 1 USPTO granted patent. Top assignees: Government of the United States of America and Theiss Research, Inc., Regents of the University of Minnesota. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 1 
1 out of 2,373 
Years Active: 2026
Title: Daniel B. Gopman and Scalable Spintronic Devices
Introduction
Daniel B. Gopman is an inventor associated with Gaithersburg, Maryland. His patent work concerns spintronic devices designed for fabrication on silicon wafers.
Latest Patents
Gopman is associated with 1 patent, titled “Scalable Spintronic Devices Formed on Silicon Wafers.” The invention describes a device built on a silicon wafer substrate with a seed layer and a perpendicular magnetic anisotropy layer exhibiting crystalline anisotropy. The magnetic layer includes at least one of the following materials: iron-palladium alloy, iron-platinum alloy, or iron-platinum-palladium alloy.
Career Highlights
Gopman’s listed organizational affiliations include the Regents of the University of Minnesota, the Government of the United States of America, and Theiss Research, Inc. His patent reflects work on integrating magnetic materials and spintronic structures with silicon wafer substrates.
Collaborations
Jian-Ping Wang and Deyuan Lyu are identified as Gopman’s coworkers. Their names are associated with his professional and research connections.
Conclusion
Daniel B. Gopman’s patent focuses on scalable spintronic devices that combine silicon wafer substrates with crystalline magnetic layers, highlighting his contributions to device innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile