Dandan Zhao

Title: Dandan Zhao and Storage Device Innovation

Introduction

Dandan Zhao is an inventor associated with Kioxia Corporation in Yokohama, Japan. Her patent work includes a storage-device design that uses controlled voltage sequences to switch a memory cell between resistance states.

Latest Patents

The provided information lists one patent for Zhao: “Storage Device and Method of Controlling Storage Device.” The invention describes a memory cell with first and second layers and an intervening memory layer that can switch between states of different electrical resistance. A circuit controls the switching process by alternately applying voltages of opposite polarity to the second layer. For each direction of switching, the voltage with the specified dominant polarity has a greater absolute value than the alternating voltage. This approach defines how the device writes changes to the memory layer. Zhao is credited with 1 patent.

Career Highlights

Zhao’s listed patent connects her inventive work with Kioxia Corporation, a company focused on memory and storage technologies. The patent addresses memory-cell operation and the control of write processes.

Collaborations

The available information identifies Kioxia Corporation as Zhao’s company affiliation. It does not specify additional collaborators or co-inventors.

Conclusion

Dandan Zhao’s listed patent presents a voltage-control method for switching memory states in a storage device, reflecting her contribution to memory technology at Kioxia Corporation.