Shanghai, China

Dan Shao


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):

Title: Dan Shao - Innovator in Semiconductor Memory Technology

Introduction

Dan Shao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor memory technology. His innovative work has led to the development of a unique patent that enhances the functionality of non-volatile memory devices.

Latest Patents

Dan Shao holds a patent for a "Reversible write-protection for non-volatile semiconductor memory device." This invention describes a serial memory device that includes a non-volatile memory array with multiple memory blocks. Some of these blocks can be placed in either a locked or unlocked state upon receiving specific lock or unlock signal sequences. The unlock signal sequences consist of at least two sequential signals: a first unlock sequence, which includes 1 to 7 signal bits, is applied to an address input pin or a logic low enabled write-protection input pin. Following this, a second unlock sequence is applied to a serial data access pin. The memory device also features a control logic circuit block connected to a write-protection circuit block, which identifies the designated lock and unlock signal sequences and sets a protection state in a security area.

Career Highlights

Dan Shao is currently employed at Giantec Semiconductor, Ltd. Inc. His role at the company allows him to work on cutting-edge technologies in the semiconductor industry. His expertise in memory devices has positioned him as a valuable asset to his team.

Collaborations

Dan collaborates with talented coworkers, including Qingshan Hao and Hongru Xu. Their combined efforts contribute to the advancement of semiconductor technologies and innovations within their organization.

Conclusion

Dan Shao's contributions to semiconductor memory technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of non-volatile memory devices, showcasing the importance of innovation in technology.

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