Daisuke Miyake

Title: Daisuke Miyake and Three-Dimensional Memory Device Innovation.

Introduction

Daisuke Miyake is an inventor associated with Yokkaichi, Japan, and Sandisk Technologies Inc. His patent work concerns three-dimensional memory devices and structures designed to control gate-induced drain leakage current.

Latest Patents

Miyake is associated with 1 patent: “Three-Dimensional Memory Devices Containing Structures for Controlling Gate-Induced Drain Leakage Current and Method of Making the Same.” The invention describes an alternating stack of insulating and sacrificial material layers with memory openings containing layers for charge storage, tunneling, semiconductor material, and dielectric material. It also describes forming a source region at the bottom of each opening, either through dopant outdiffusion from a doped silicate glass pillar or by recessing heavily doped semiconductor material.

Career Highlights

Miyake’s listed patent reflects work on the structure and fabrication of three-dimensional memory devices. The disclosed approaches address source-region formation and control of gate-induced drain leakage current.

Collaborations

Miyake’s listed coworker is Tomoyuki Obu. Both are associated with the patent concerning three-dimensional memory device structures.

Conclusion

Daisuke Miyake’s patent work at Sandisk Technologies Inc. focuses on fabrication techniques for three-dimensional memory devices, including structures intended to control leakage current.