Aomori, Japan

Daisuke Hasegawa

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Nihon Micronics. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daisuke Hasegawa. Retrieved from https://idiyas.com/inventor/daisuke-hasegawa-vcz48ldu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Daisuke Hasegawa: Innovator in Secondary Battery Technology

Introduction

Daisuke Hasegawa is a prominent inventor based in Aomori, Japan. He has made significant contributions to the field of battery technology, particularly in the development of secondary batteries. His innovative approach has led to advancements that enhance electricity storage performance.

Latest Patents

Hasegawa holds a patent for a secondary battery that features a solid electrolyte layer containing tantalum oxide. This battery design includes a positive-electrode active material layer with nickel hydroxide and a negative-electrode active material layer made of titanium oxide or a combination of titanium oxide and silicon oxide. This invention aims to improve self-discharge rates, thereby enhancing overall electricity storage performance. He has 1 patent to his name.

Career Highlights

Daisuke Hasegawa is associated with Kabushiki Kaisha Nihon Micronics, where he continues to work on innovative battery solutions. His career is marked by a commitment to advancing technology in the energy storage sector.

Collaborations

Hasegawa collaborates with talented individuals such as Kazuyuki Tsunokuni and Tomokazu Saito, contributing to a dynamic team focused on innovation.

Conclusion

Daisuke Hasegawa's work in secondary battery technology exemplifies the spirit of innovation. His contributions are paving the way for improved energy storage solutions in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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