Seoul, South Korea

Dai-Woon Lee

This inventor holds 1 USPTO granted patent. Top assignee: Yeda Research and Develpment & Co. Ltd. Active years: 1979.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dai-Woon Lee. Retrieved from https://idiyas.com/inventor/dai-woon-lee-vk2lj7ru

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1979

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1 patent (USPTO):Explore Patents

Title: The Innovations of Dai-Woon Lee

Introduction

Dai-Woon Lee is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of materials science, particularly in the development of specialized polyurethane foams. His work focuses on innovative solutions for extracting nickel from aqueous solutions.

Latest Patents

Dai-Woon Lee holds a patent for "Nickel selective dioxime-containing polyurethane foams." This invention provides an extraction means for the selective extraction of nickel from aqueous solutions. The patent describes an open-pore polyurethane foam that supports a dioxime, which can be substituted with various groups or form a ring structure.

Career Highlights

Dai-Woon Lee has established himself as a key figure in his field through his innovative research and development efforts. He is currently associated with Yeda Research and Development & Co. Ltd., where he continues to explore advancements in material applications.

Collaborations

Dai-Woon Lee collaborates with Martin M Halmann, contributing to the advancement of their shared research interests.

Conclusion

Dai-Woon Lee's work exemplifies the intersection of innovation and practical application in materials science. His contributions, particularly in nickel extraction technologies, highlight the importance of inventive solutions in addressing industrial challenges.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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