Suwon-si, South Korea

Dahm Yu

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dahm Yu. Retrieved from https://idiyas.com/inventor/dahm-yu-dz5m52av

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Dahm Yu: Semiconductor Test Equipment Inventor

Introduction

Dahm Yu is an inventor based in Suwon-si, South Korea, and works at Samsung Electronics. His patent work focuses on equipment for testing semiconductor devices and burn-in boards. He is credited with 2 patents.

Latest Patents

Yu’s listed patents address test-chamber airflow and temperature verification during semiconductor testing.

“Test apparatus with test chamber for burn in boards” describes a chamber with two racks that support stacked burn-in boards. A supply duct and inclined flow-distributor plates direct airflow toward the boards in each rack, helping manage conditions within the test chamber.

“Test device and semiconductor manufacturing apparatus including test device” describes a test board equipped with a connector, heating device, temperature sensor, and test socket. The device can verify a chamber’s internal temperature before or after a test process, supporting the reliability of semiconductor testing.

Career Highlights

At Samsung Electronics, Yu’s listed inventions concern practical aspects of semiconductor test systems, including airflow distribution and temperature monitoring. These features are designed to support controlled testing conditions.

Collaborations

Yu’s listed coworkers include Jihyun Choi and Seonmi Lee. The provided information does not specify their roles or the details of any joint patent work.

Conclusion

Dahm Yu’s patent portfolio reflects a focus on improving semiconductor test equipment through chamber airflow management and temperature verification.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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