Kyungki-do, South Korea

Dae Sig Kim

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2003-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Sig Kim. Retrieved from https://idiyas.com/inventor/dae-sig-kim-1ih68nhp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 5.1

ph-index = 2

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2003-2004

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2 patents (USPTO):Explore Patents

Title: The Innovations of Dae Sig Kim

Introduction

Dae Sig Kim is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of chemical vapor deposition and atomic layer deposition. With a total of 2 patents, his work has garnered attention in the industry.

Latest Patents

Dae Sig Kim's latest patents include innovative technologies such as Group IV metal precursors and a method of chemical vapor deposition using the same. Additionally, he has developed an atomic layer deposition method utilizing a novel Group IV metal precursor. These advancements are crucial for enhancing the efficiency and effectiveness of various applications in semiconductor manufacturing.

Career Highlights

Dae Sig Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology. His work at this leading company has allowed him to collaborate with some of the brightest minds in the industry.

Collaborations

Some of his notable coworkers include Yo Sep Min and Young Jin Cho. Their collective expertise contributes to the innovative environment at Samsung Electronics Co., Ltd.

Conclusion

Dae Sig Kim's contributions to the field of chemical vapor deposition and atomic layer deposition highlight his role as a key inventor in the industry. His patents and ongoing work at Samsung Electronics Co., Ltd. demonstrate his commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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