Dae S Jung

Title: Dae S Jung and Semiconductor Transistor Innovation.

Introduction

Dae S Jung is an inventor associated with semiconductor device technology and patents concerning MOSFETs with nonuniformly doped channels. His listed location is Bubaleub, KR, and he is associated with Hyundai Electronics Industries Co. Ltd. The provided information credits him with 2 patents.

Latest Patents

Jung’s listed patents, “Transistor Having a Nonuniform Doping Channel” and “Transistor Having a Nonuniform Doping Channel and Method for Fabricating,” describe a MOSFET structure designed around a trench in a semiconductor substrate. The device includes a gate oxide film and an asymmetrical gate electrode, with one portion extending farther than the other.

The described structure places a source region beside the shorter portion of the gate electrode. A high-density channel region, doped with impurities of the same type as the substrate, lies beneath the longer portion, while a drain region is positioned next to that channel region. The patent descriptions also address a method for fabricating the transistor.

Career Highlights

Jung’s listed work focuses on transistor design and semiconductor fabrication. The nonuniform channel arrangement and asymmetrical gate geometry are central features of the inventions described in his patent records.

Collaborations

Jung is associated with Hyundai Electronics Industries Co. Ltd. His listed coworkers include Bong K Joo and Sang Yong Kim.

Conclusion

Dae S Jung’s patent record highlights work on MOSFETs that use an asymmetrical gate and a nonuniformly doped channel, reflecting a focused contribution to semiconductor transistor design.