Seoul, South Korea

Dae Kun Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Kun Ahn. Retrieved from https://idiyas.com/inventor/dae-kun-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Dae Kun Ahn: Image Sensor Inventor

Introduction

Dae Kun Ahn is an inventor based in Seoul, South Korea, and is associated with Samsung Electronics Ltd. His patent work includes an image sensor design that integrates pixel isolation and capacitor structures within a semiconductor substrate.

Latest Patents

Ahn is credited with 1 patent. His patent, “Image Sensor,” describes a substrate containing multiple unit pixels, each with a photoelectric conversion element. A lattice-shaped trench isolates the pixels, while capacitor structures extend along the trench sidewalls. Each structure includes first and second electrodes separated by a dielectric layer. A capacitor isolation pattern at the lattice points separates the capacitor structures.

Career Highlights

Ahn’s documented patent contribution focuses on image sensor architecture, combining pixel isolation with integrated capacitor structures. The patent is associated with Samsung Electronics Ltd.

Collaborations

Ahn’s listed coworkers include Hyuk Soon Choi and Sang-Su Park.

Conclusion

Dae Kun Ahn’s patent describes an image sensor design that brings together isolated unit pixels and trench-integrated capacitor structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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