Dae Hyun Kim

Title: Dae Hyun Kim: Innovator in Flash EEPROM Technology

Introduction

Dae Hyun Kim is a notable inventor based in Fremont, CA. He has made significant contributions to the field of flash EEPROM technology. His innovative work has led to the development of a patent that enhances the performance of memory cells.

Latest Patents

Dae Hyun Kim holds a patent for "Threshold Voltage Convergence." This patent describes a convergence signal that includes a series of voltage pulses used to perform a convergence procedure in one or more flash EEPROM memory cells. In one instance, subsequent voltage pulses in the convergence signal each have a higher voltage than the preceding pulse. In another instance, subsequent voltage pulses in the convergence signal each have a longer duration than the preceding pulse. The integrated circuit associated with this patent includes an array of memory cells and an erase control unit that manages the application of the convergence signal to one or more memory cells. The integrated circuit may be either serial or parallel flash EEPROM, utilizing bulk, sector, or page mode erasing.

Career Highlights

Dae Hyun Kim is currently employed at Nexflash Technologies, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of flash memory systems.

Collaborations

Dae Hyun Kim has collaborated with notable colleagues such as Kyung Joon Han and Joo Weon Park. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Dae Hyun Kim is a prominent figure in the realm of flash EEPROM technology, with a patent that showcases his innovative approach to memory cell performance. His contributions continue to influence the industry and pave the way for future advancements.