Seoul, South Korea

Dae-Hoon Bae

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae-Hoon Bae. Retrieved from https://idiyas.com/inventor/dae-hoon-bae-ge0iyi7i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Dae-Hoon Bae: Innovator in Semiconductor Manufacturing

Introduction

Dae-Hoon Bae is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Dae-Hoon Bae holds a patent titled "Method for manufacturing semiconductor device with stagnated process gas." This invention involves a process performed with stagnated process gas in a chamber. The method includes supplying process gas into a chamber, blocking the entry and exit of the gas to stagnate it, and executing the process. This approach significantly reduces process time, maximizes yield, and minimizes the amount of process gas used. He has 1 patent to his name.

Career Highlights

Dae-Hoon Bae is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing manufacturing efficiency and product quality.

Collaborations

Some of his notable coworkers include Se-Jin Lee and Jae-Chul Lee, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Dae-Hoon Bae's innovative contributions to semiconductor manufacturing exemplify the impact of dedicated inventors in advancing technology. His work not only improves efficiency but also sets a benchmark for future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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