Bucheon, South Korea

Dae Gun Lee

This inventor holds 1 USPTO granted patent. Top assignee: Anam Semiconductor Inc.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae Gun Lee. Retrieved from https://idiyas.com/inventor/dae-gun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Innovations of Dae Gun Lee in Semiconductor Technology

Introduction: Dae Gun Lee is a notable inventor based in Bucheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the area of dual damascene structures. His innovative methods have simplified manufacturing processes, making them more efficient.

Latest Patents: Dae Gun Lee holds a patent for a "Method for forming a dual damascene structure in a semiconductor device." This patent describes a process where an insulating layer is formed on a semiconductor substrate, followed by the application of a silicon nitride etch stop layer. A photoresist layer is then applied for a contact hole pattern, leading to a simplified manufacturing process that utilizes a single photoresist process and a single etch stop layer. This innovation allows for the efficient creation of dual damascene structures.

Career Highlights: Dae Gun Lee is currently associated with Anam Semiconductor Inc., where he continues to work on advancing semiconductor technologies. His expertise in the field has positioned him as a valuable asset to the company and the industry at large.

Collaborations:

Conclusion: Dae Gun Lee's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor in the industry. His work continues to impact the efficiency of semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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