Suwon, South Korea

Da Woon Choi

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Da Woon Choi. Retrieved from https://idiyas.com/inventor/da-woon-choi-p7ngzhg5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Da Woon Choi: Semiconductor Invention and Patent Profile.

Introduction

Da Woon Choi is an inventor based in Suwon, South Korea. His patent work includes a semiconductor device design, and he is associated with Samsung Electronics Ltd.

Latest Patents

Choi is named on one patent. The invention, titled “Semiconductor device,” describes a device with two spaced active patterns, a gate electrode, a source/drain region, and connected through-vias. One via is positioned within the substrate between the active patterns, while another passes through an upper interlayer insulating layer. The first via’s width continuously narrows toward the substrate’s lower surface. This arrangement concerns the structure and placement of interconnects in a semiconductor device.

Career Highlights

Choi’s recorded patent activity includes 1 patent related to semiconductor technology. His association with Samsung Electronics Ltd. places his work within the company’s semiconductor innovation efforts.

Collaborations

Bongkeun Kim and Myung Soo Noh are identified as Choi’s coworkers. Their names provide context for his professional connections, though the supplied information does not specify their roles in the patent.

Conclusion

Da Woon Choi’s patent profile highlights a semiconductor device invention involving carefully arranged active patterns and through-vias, reflecting his connection to semiconductor innovation at Samsung Electronics Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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