Company Filing History:
Years Active: 1983
Title: D L Bergeron: Innovator in Semiconductor Technology
Introduction
D L Bergeron is a notable inventor based in Winooski, Vermont, known for his contributions to semiconductor technology. He holds a patent for a Schottky Barrier diode with controlled characteristics, which showcases his expertise in the field.
Latest Patents
His patent, titled "Schottky Barrier diode with controlled characteristics," describes a self-isolated Schottky Barrier diode structure and method of fabrication. This invention involves creating an opening through an oxide layer over a central region of an n-type semiconductor substrate. The design features inclined sidewalls surrounding the central region, allowing for precise control over the barrier height and the lifetime of minority carriers. This innovation effectively minimizes PNP parasitic transistor action, enhancing the performance of the diode.
Career Highlights
D L Bergeron has made significant strides in his career, particularly through his work at International Business Machines Corporation (IBM). His contributions to the field of semiconductor devices have been recognized and valued within the industry.
Collaborations
Throughout his career, D L Bergeron has collaborated with esteemed colleagues, including Daniel J Fleming and Geoffrey B Stephens. These partnerships have furthered advancements in semiconductor technology and innovation.
Conclusion
D L Bergeron's work in developing the Schottky Barrier diode with controlled characteristics exemplifies his innovative spirit and technical expertise. His contributions continue to influence the semiconductor industry and pave the way for future advancements.