Company Filing History:
Years Active: 2012
Title: Céline Chevalier: Innovator in ZnO Substrate Technology
Introduction
Céline Chevalier is a notable inventor based in Echirolles, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of ZnO substrates. With a total of 2 patents, his work has implications for various electronic and optoelectronic devices.
Latest Patents
Céline Chevalier's latest patents include a method of producing a partly or completely semi-insulating or p-type doped ZnO substrate. This innovative method involves bringing an n-type doped ZnO substrate into contact with an anhydrous molten salt, such as sodium nitrate, lithium nitrate, potassium nitrate, or rubidium nitrate. The resulting substrate can be in the form of a thin layer, film, or nanowires, and is doped with elements like Na, Li, K, Rb, N, and O. This substrate allows for the epitaxial growth of ZnO or GaN, making it suitable for use in electronic devices like light-emitting diodes (LEDs). Another patent focuses on the preparation of p-type doped ZnO or ZnMgO, which can also be utilized in optoelectronic devices.
Career Highlights
Céline Chevalier has worked with prominent organizations, including the Commissariat à l'Énergie Atomique and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and their applications.
Collaborations
Céline has collaborated with Maurice Couchaud, further enhancing his research and development efforts in the field of ZnO substrates.
Conclusion
Céline Chevalier's innovative work in the development of ZnO substrates has positioned him as a key figure in semiconductor technology. His patents reflect a commitment to advancing electronic and optoelectronic devices, contributing to the future of this vital industry.