Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Céline Chevalier

Maurice Couchaud

Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an anhydrous molten salt chosen from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate. Partly or completely semi-insulating or p-type doped ZnO substrate, said substrate being in particular in the form of a thin layer, film or in the form of nanowires; and said substrate being doped at the same time by an element chosen from Na, Li, K and Rb; by N; and by O; it being furthermore possible for ZnO or GaN to be epitaxially grown on this substrate. Electronic, optoelectronic or electro-optic device such as a light-emitting diode (LED) comprising this substrate.

Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them

Method of preparing p-type doped ZnO or p-type doped ZnMgO, in which the following successive steps are carried out: The p-type doped ZnO or ZnMgO obtained by this method may be used in an optoelectronic device such as a light emitting diode.

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Echirolles, France

Céline Chevalier