Poughkeepsie, NY, United States of America

Cyril P De Vries


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1988

Loading Chart...
1 patent (USPTO):Explore Patents

Title: **Innovations by Cyril P. de Vries: A Focus on Schottky Diode Technology**

Introduction

Cyril P. de Vries, an accomplished inventor based in Poughkeepsie, NY, has made significant contributions to semiconductor technology. With a portfolio comprising a notable patent, his work primarily focuses on enhancing electronic components through innovative metallurgical processes.

Latest Patents

Cyril's most prominent patent, titled "Schottky Diode and Ohmic Contact Metallurgy," introduces groundbreaking concepts essential for shallow-junction bipolar semiconductor devices. The invention features a thin layer of highly pure Schottky metal, which improves performance by being applied in contact openings of less than 850 angstroms. This innovative approach ensures that the electrically conducting barrier layer does not react with the Schottky metal or the semiconductor material, thus stabilizing the operation of Schottky barrier diodes even after multiple heat treatments. The design flexibility in doping the semiconductor material allows for the formation of either an ohmic contact or a Schottky barrier diode, optimizing the functionality of these devices.

Career Highlights

Cyril is associated with the International Business Machines Corporation (IBM), where he employs his expertise in semiconductor technology to develop new and improved electronic components. His commitment to innovation and high-quality engineering is evident from his single yet impactful patent.

Collaborations

Throughout his career, Cyril has collaborated with esteemed colleagues including Harasaran S. Bhatia and Satya P. Bhatia. These collaborations contribute to a rich environment of innovation and knowledge exchange, assisting in the development of advanced technological solutions in the field of semiconductors.

Conclusion

Cyril P. de Vries exemplifies the spirit of innovation within the semiconductor industry. His patent on Schottky diodes and ohmic contact metallurgy represents not only a personal achievement, but also a significant advancement for engineers and manufacturers in enhancing the performance of semiconductor devices. Through continuous collaboration and a dedication to research, Cyril and his coworkers are poised to drive further innovations in this vital field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…