The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1988
Filed:
Aug. 08, 1986
Harasaran S Bhatia, Hopewell Junction, NY (US);
Satya P Bhatia, Wappingers Falls, NY (US);
Cyril P de Vries, Poughkeepsie, NY (US);
Douglas A Grose, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A Schottky barrier diode and ohmic contact metallurgy which is especially suited for shallow-junction bipolar semiconductor devices. The metallurgy comprises a thin layer of an at least 95 atomic % pure Schottky metal disposed in the contact openings on a shallow-junction semiconductor device to a thickness of less than 850 angstroms. An electrically conducting barrier layer is then disposed over the thin Schottky metal layer, with the barrier layer being of a material which does not react with either the Schottky metal or the semiconductor material in the contact openings to thereby prevent semiconductor material from diffusing past the barrier layer. An electrical contact layer is then deposited over the barrier layer. The doping of the semiconductor material in the individual contact openings determines whether an ohmic contact or a Schottky barrier diode is formed. The resulting ohmic contact metal and Schottky barrier metal do not penetrate through to the shallow junction of the semiconductor device. Additionally, the Schottky barrier diodes maintain a desired barrier height despite repeated heat treatments.