This inventor holds 1 USPTO granted patent. Top assignee: Vlsi Technology, Inc.. Active years: 1994.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1994
Title: Curtis M Hebert, Jr: Innovator in Semiconductor Technology
Introduction
Curtis M Hebert, Jr. is a notable inventor based in San Antonio, TX (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent related to thermal traps for gaseous materials. His work has implications for improving semiconductor deposition systems.
Latest Patents
Hebert holds a patent for a "Thermal trap for gaseous materials." This invention features a semiconductor deposition system that includes a processing chamber, a source of process gas, a thermal trap, and a pump mechanism. The thermal trap is designed to efficiently manage gaseous materials by maintaining specific temperature conditions to facilitate the condensation of gases into solid forms.
Career Highlights
Curtis M Hebert, Jr. has been associated with Vlsi Technology, Inc., where he has applied his expertise in semiconductor technology. His innovative approach has led to advancements in the efficiency and effectiveness of semiconductor processes.
Collaborations
Hebert has collaborated with notable coworkers such as Oscar L Caton and Craig A Bellows. Their combined efforts have contributed to the development of cutting-edge technologies in the semiconductor industry.
Conclusion
Curtis M Hebert, Jr. is a distinguished inventor whose work in semiconductor technology continues to influence the industry. His patent on thermal traps showcases his innovative spirit and commitment to advancing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile