Curtis F Wyman

Title: Curtis F. Wyman and His MRAM Memory System Patent.

Introduction

Curtis F. Wyman is an inventor associated with Austin, Texas, and Freescale Semiconductor, Inc. His recorded patent concerns a nonvolatile memory system that combines magnetoresistive random access memory (MRAM) with floating-gate memory.

Latest Patents

Wyman’s listed patent, “Nonvolatile Memory System Using Magneto-Resistive Random Access Memory (MRAM),” describes a system containing MRAM cells, floating-gate nonvolatile memory cells, and a controller connected to both memory types. The controller interfaces with a system bus and selects which memory to control in response to an access initiated through that bus. The supplied information lists 1 patent for Wyman.

Career Highlights

Wyman’s listed work is associated with Freescale Semiconductor, Inc. The patent reflects an approach to nonvolatile memory design that brings two memory technologies together under a shared controller.

Collaborations

The supplied information identifies Qadeer A. Qureshi and Thomas Jew as Wyman’s coworkers. Their names are provided as professional associations, but no specific roles in the patent are stated.

Conclusion

Curtis F. Wyman’s recorded invention focuses on coordinating MRAM and floating-gate memory through a controller, offering a combined architecture for nonvolatile data storage.