Cuiyu Mei

Title: Innovations of Cuiyu Mei in CMOS Image Sensor Technology.

Introduction

Cuiyu Mei is a notable inventor based in Shanghai, China. He has made significant contributions to the field of image sensor technology, particularly through his innovative methods in preparing pixel cells for CMOS image sensors. His work has implications for enhancing the performance and efficiency of imaging devices.

Latest Patents

Cuiyu Mei holds a patent titled "Method for preparing pixel cell of CMOS image sensor." This patent discloses a method that optimizes the process of ion implantation in the pixel area of a CMOS image sensor. The method involves performing N-type ion implantation on the photodiode before the formation of the polysilicon gate of each MOS transistor. By enlarging the photoresist open area through a dry etching descum process, the N-type ion implantation area is also enlarged. This innovative approach allows for two rounds of N-type ion implantation using the same mask, achieving different depths and pattern sizes. This technique not only saves a mask layer but also reduces the number of photolithography steps required.

Career Highlights

Cuiyu Mei is currently employed at Shanghai Huali Microelectronics Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work at the company has positioned him as a key player in the innovation of CMOS image sensors.

Collaborations

Cuiyu Mei collaborates with Lu Wang, who is also involved in the field of semiconductor technology. Their partnership enhances the research and development efforts at Shanghai Huali Microelectronics Corporation.

Conclusion

Cuiyu Mei's contributions to the field of CMOS image sensors through his innovative patent demonstrate his expertise and commitment to advancing technology. His work not only improves the efficiency of imaging devices but also showcases the importance of innovation in the semiconductor industry.