Cuiyang Wang

Title: Innovations by Cuiyang Wang in Semiconductor Manufacturing

Introduction

Cuiyang Wang is a notable inventor based in Singapore, recognized for his contributions to semiconductor manufacturing. He has developed a significant patent that addresses challenges in the chemical mechanical polishing (CMP) process, which is crucial for the fabrication of integrated circuit devices.

Latest Patents

Cuiyang Wang holds a patent titled "Method for improving oxide erosion of tungsten CMP operations." This innovative method aims to prevent oxide erosion during the metal plug process by utilizing a silicon nitride layer over the oxide. The process involves depositing an oxide layer over a semiconductor substrate, followed by a silicon nitride layer. An opening is then etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited over the silicon nitride layer and into the opening, followed by a metal layer. The polishing of these layers is performed using CMP, with a polish stop at the silicon nitride layer, ensuring the formation of a metal plug while preventing erosion of the oxide layer.

Career Highlights

Cuiyang Wang is associated with Chartered Semiconductor Manufacturing Ltd, where he applies his expertise in semiconductor technology. His work has significantly impacted the efficiency and reliability of semiconductor manufacturing processes.

Collaborations

Cuiyang Wang collaborates with talented professionals in his field, including Xian Bin Wang and Yi Liang Xu. Their combined efforts contribute to advancements in semiconductor technologies and innovations.

Conclusion

Cuiyang Wang's innovative approach to improving oxide erosion in tungsten CMP operations showcases his expertise and commitment to advancing semiconductor manufacturing. His contributions are vital for the ongoing development of integrated circuit devices.