Portland, OR, United States of America

Craig Andyke


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2003-2005

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2 patents (USPTO):Explore Patents

Title: Innovations of Craig Andyke

Introduction

Craig Andyke is an accomplished inventor based in Portland, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors. With a total of 2 patents, his work has had a notable impact on the industry.

Latest Patents

One of Craig's latest patents focuses on forming strained source drain junction field effect transistors. This innovation involves providing a high dose germanium implant and subsequently forming a P-type source/drain extension. The result is a strained source/drain junction that may be shallower and exhibit lower resistivity in certain embodiments. This technology enhances the performance and efficiency of transistors, making them more effective for various applications.

Career Highlights

Craig Andyke is currently employed at Intel Corporation, a leading company in the semiconductor industry. His role at Intel allows him to work on cutting-edge technologies that drive innovation in electronics. His expertise in semiconductor design and fabrication has positioned him as a valuable asset to the company.

Collaborations

Throughout his career, Craig has collaborated with talented individuals such as Jack Hwang and Mitchell C Taylor. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

In summary, Craig Andyke is a prominent inventor whose work in semiconductor technology has led to significant advancements in the field. His contributions, particularly in the area of strained source drain junction field effect transistors, demonstrate his commitment to innovation and excellence.

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