This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2002.
Company Filing History:
Years Active: 2002
Title: Corine Bucher: Innovator in Semiconductor Technology
Introduction
Corine Bucher is a notable inventor based in Corbeil-Essonnes, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming buried straps and quantum barriers in deep trench cell capacitors. His innovative work has led to advancements in the efficiency and functionality of semiconductor devices.
Latest Patents
Corine Bucher holds a patent for "Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors." This patent describes a method that involves the deposition of a thin continuous layer of undoped amorphous silicon, followed by nitridization to produce a silicon nitride quantum conducting barrier film. The process includes the deposition of a dual layer of undoped amorphous silicon and a dopant monolayer, ultimately leading to the activation of dopants to ensure electrical continuity between polycrystalline and monocrystalline regions through quantum mechanical effects. He has 1 patent to his name.
Career Highlights
Corine Bucher is associated with the International Business Machines Corporation (IBM), where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's research and development efforts but has also positioned him as a key figure in the field of electronics.
Collaborations
Throughout his career, Corine has collaborated with notable colleagues such as Mathias Bostelmann and Jean-Marc Rousseau. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.
Conclusion
Corine Bucher is a distinguished inventor whose work in semiconductor technology has paved the way for new advancements in the industry. His contributions, particularly in the area of buried straps and quantum barriers, highlight the importance of innovation in enhancing the performance of electronic devices.