Conor S Rafferty

Title: Conor S Rafferty: Innovator in Semiconductor Technology

Introduction

Conor S Rafferty is a notable inventor based in Basking Ridge, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Conor S Rafferty holds a patent for a semiconductor device comprising a silicide layer and a method of making it. The patent describes a method for creating a silicon-based semiconductor device that includes a contact region with a thin, uniform silicide layer, preferably composed of CoSi₂ or TiSi₂. The process involves implanting metal ions into a silicon body, followed by an annealing treatment that leads to recrystallization and the formation of the silicide layer. This invention is particularly advantageous for use in extremely shallow junctions, which are essential for short channel CMOS devices.

Career Highlights

Conor S Rafferty is associated with AT&T Bell Laboratories, a renowned institution known for its research and development in telecommunications and technology. His work at this prestigious company has allowed him to contribute to advancements in semiconductor devices.

Collaborations

Throughout his career, Conor has collaborated with notable colleagues, including Sarah A Audet and Kenneth T Short. These collaborations have likely enriched his research and development efforts in the semiconductor field.

Conclusion

Conor S Rafferty's innovative work in semiconductor technology, particularly his patented method for creating silicide layers, showcases his expertise and contributions to the industry. His association with AT&T Bell Laboratories further highlights the significance of his work in advancing semiconductor technology.