Company Filing History:
Years Active: 2022-2025
Title: Codrin Prahoveanu: Innovator in Plasma Etching Technology
Introduction
Codrin Prahoveanu is a notable inventor based in Newport, GB. He has made significant contributions to the field of plasma etching technology, holding a total of 3 patents. His work focuses on advancing methods and apparatuses that enhance semiconductor processing.
Latest Patents
One of his latest patents is a plasma etching apparatus and method. This invention includes a plasma chamber and a plasma generation device that sustains plasma within the chamber. It features a substrate support for holding the semiconductor substrate, which comprises an electrically conductive structure. The apparatus also includes a power supply that provides an RF electrical signal to the conductive structure, along with an annular dielectric ring structure that has an electrically conductive coating. This innovative design allows for effective coupling of RF power to the coating.
Another significant patent is the method and apparatus for plasma etching. This invention involves a structure that includes a substrate and a component that forms involatile metal etch products. The etching process is performed in a chamber with two gas inlet arrangements, allowing for a two-step plasma etching process using different gas mixtures. This method enhances the precision and efficiency of the etching process.
Career Highlights
Codrin Prahoveanu is currently associated with SPTS Technologies Limited, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise in plasma etching has positioned him as a key player in the industry.
Collaborations
He has collaborated with talented individuals such as Huma Ashraf and Kevin Riddell, contributing to various innovative projects within his field.
Conclusion
Codrin Prahoveanu's contributions to plasma etching technology demonstrate his commitment to innovation and excellence in semiconductor processing. His patents reflect a deep understanding of the complexities involved in this critical area of technology.